Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3586259
Reference16 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
3. Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures
4. Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain
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