Author:
Rajamohanan Bijesh,Mohata Dheeraj,Ali Ashkar,Datta Suman
Subject
Physics and Astronomy (miscellaneous)
Reference19 articles.
1. Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing
2. Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications
3. Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures
4. V. Saripalli, D. K. Mohata, S. Mookerjea, S. Datta, and V. Narayanan, in 68th Annual Device Research Conference (DRC) (IEEE, DRC, 2010), p. 103.
5. Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs
Cited by
40 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献