Modification of the growth mode of Ge on Si by buried Ge islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126762
Reference14 articles.
1. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
2. Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)
3. Growth and characterization of self-assembled Ge-rich islands on Si
4. Optical properties of Ge self-organized quantum dots in Si
5. Intraband absorption in Ge/Si self-assembled quantum dots
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1. Thermodynamic theory of growth of nanostructures;Progress in Materials Science;2014-07
2. Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering;Advanced Materials Research;2013-12
3. Growth and self-organization of SiGe nanostructures;Physics Reports;2013-01
4. Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition;Acta Physica Sinica;2012
5. Thermodynamic stability of quantum dots on strained substrates;Physica E: Low-dimensional Systems and Nanostructures;2011-07
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