Effects of Zn2+ and Ga3+ doping on the quantum yield of cluster-derived InP quantum dots-Reference-Cited by-同舟云学术

Effects of Zn2+ and Ga3+ doping on the quantum yield of cluster-derived InP quantum dots

Published:2019-11-21 Issue:19 Volume:151 Page:194702
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Friedfeld Max R.¹^ORCID,Stein Jennifer L.¹^ORCID,Johnson Dane A.¹,Park Nayon¹,Henry Nicholas A.¹,Enright Michael J.¹^ORCID,Mocatta David²,Cossairt Brandi M.¹^ORCID

Affiliation:

1. Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195-1700, USA

2. Nanomaterials Group, Performance Materials, Merck Group, Box 39082, 9139002 Jerusalem, Israel

Funder

National Science Foundation

Washington Research Foundation

Merck KGaA

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5126971

Reference32 articles.

1. Quantum dots: The ultimate down-conversion material for LCD displays

2. A New Frontier for Quantum Dots in Displays

3. Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP–ZnSe Quantum Dots

4. Two-Step “Seed-Mediated” Synthetic Approach to Colloidal Indium Phosphide Quantum Dots with High-Purity Photo- and Electroluminescence

5. A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core–Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes

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