A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core–Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes-Reference-Cited by-同舟云学术

A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core–Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes

Published:2018-10-18 Issue:21 Volume:30 Page:8002-8007
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Cao Fan¹,Wang Sheng¹,Wang Feijiu²^ORCID,Wu Qianqian¹,Zhao Dewei³^ORCID,Yang Xuyong¹^ORCID

Affiliation:

1. Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China

2. Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

3. Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States

Funder

Ministry of Science and Technology of the People's Republic of China

Shanghai Municipal Education Commission

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b03671

Reference44 articles.