GaN ultraviolet photosensors capped by low-temperature aluminium nitride layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2757606
Reference19 articles.
1. Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity
2. GaN-Based Ultraviolet p-i-n Photodiodes with Buried p-Layer Structure Grown by MOVPE
3. Nitride-Based MIS-Like Photodiodes With Semiinsulating Mg-Doped GaN Cap Layers
4. GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with Ir∕Pt Contact Electrodes
5. In/sub 0.37/Ga/sub 0.63/N metal-semiconductor-metal photodetectors with recessed electrodes
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