Photoluminescence and lasing characteristics of single nonpolar GaN microwires-Reference-Cited by-同舟云学术

Photoluminescence and lasing characteristics of single nonpolar GaN microwires

Published:2017 Issue:35 Volume:7 Page:21541-21546
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yan S. S.¹²³⁴⁵,Chen A. Q.⁶⁷⁵,Wu Y. Y.⁸⁹¹⁰¹¹⁵,Zhu H.⁸⁹¹⁰¹¹⁵,Wang X. H.¹²¹³¹⁴⁵,Ling C. C.⁶⁷⁵,Su S. C.¹²³⁴⁵^ORCID

Affiliation:

1. Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices

2. Institute of Opto-electronic Materials and Technology

3. South China Normal University

4. Guangzhou 510631

5. China

6. Department of Physics

7. The University of Hong Kong

8. State Key Laboratory of Optoelectronic Materials and Technologies

9. School of Physics

10. Sun Yat-Sen University

11. Guangzhou 510275

12. Institute of Microelectronics

13. Tsinghua University

14. Beijing 100084

Abstract

Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA01921A

Reference39 articles.

1. Ultraviolet and violet GaN light emitting diodes on silicon

2. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

3. A two-dimensional optical fibre microphone array with matrix-style data readout

4. Optimized Spiral Metal-Gallium-Nitride Nanowire Cavity for Ultra-High Circular Dichroism Ultraviolet Lasing at Room Temperature

5. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

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