Stress relief in heavily doped silicon layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332121
Reference14 articles.
1. Effect of static uniaxial stress on the Raman spectrum of silicon
2. Effect of Carrier Concentration on the Raman Frequencies of Si and Ge
3. Electron-phonon coupling in highly doped n type silicon
4. Effect of dimensions on the vibrational frequencies of thin slabs of silicon
5. Raman scattering from small particle size polycrystalline silicon
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1. Heteroepitaxial silicon film growth at 600°C from an Al–Si eutectic melt;Thin Solid Films;2010-07
2. Stress measurements in polycrystalline silicon films grown by hot-wire chemical vapor deposition;Materials Letters;1997-02
3. Raman scattering in polycrystalline silicon doped with boron;Journal of Applied Physics;1992-10-15
4. Raman scattering and stress measurements in Si1−xGexlayers epitaxially grown on Si(100) by ion‐beam sputter deposition;Journal of Applied Physics;1991-10-15
5. Strain Characterization of Semiconductor Structures and Superlattices;Light Scattering in Semiconductor Structures and Superlattices;1991
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