Type-II InGaN-GaNAs quantum wells for lasers applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference23 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. The quantum efficiency of green GaInN/GaN light emitting diodes
3. Continuous-wave Operation of AlGaN-cladding-free Nonpolarm-Plane InGaN/GaN Laser Diodes
4. Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
5. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
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1. Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers;Japanese Journal of Applied Physics;2023-07-01
2. Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes;Journal of Vacuum Science & Technology A;2023-04-12
3. Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures;Advances in Condensed Matter Physics;2022-09-26
4. Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters;Crystal Growth & Design;2021-11-22
5. Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple‐Quantum‐Well Near‐Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2021-11-19
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