Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces
Author:
Affiliation:
1. Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4974291
Reference37 articles.
1. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
2. III–V/Ge channel MOS device technologies in nano CMOS era
3. High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation
4. Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation
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