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Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

  • Published:2014-07 Issue:7 Volume:61 Page:2316-2323
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Funder

National Program on Key Basic Research Project (973 Program) of China

Grant-in-Aid for Scientific Research

Ministry of Education, Culture, Sports, Science and Technology of Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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1. Enhancing Device Performance with High Electron Mobility GeSn Materials;Advanced Electronic Materials;2024-08-22

2. Ge-on-insulator fabrication based on Ge-on-nothing technology;Japanese Journal of Applied Physics;2024-04-01

3. Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method;ECS Journal of Solid State Science and Technology;2024-04-01

4. Impedance-Edited Multiple Low-Frequency Harmonic Current Adaptive Suppression;IEEE Transactions on Power Electronics;2023-06

5. Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17
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