Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces-Reference-Cited by-同舟云学术

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Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces

Published:2018-06-28 Issue:24 Volume:123 Page:245307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cohen-Azarzar Dana¹,Baskin Maria¹,Kornblum Lior¹^ORCID

Affiliation:

1. The Andrew & Erna Viterbi Department of Electrical Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel

Funder

German-Israeli Foundation for Scientific Research and Development

Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5030119

Reference59 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface

3. Coexistence of Superconductivity and Ferromagnetism in Two Dimensions

4. Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces

5. Properties of high-density two-dimensional electron gases at Mott/band insulator interfaces

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1. Scalable and highly tunable conductive oxide interfaces;APL Materials;2023-11-01

2. Scalable Al ₂ O ₃ –TiO ₂ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices;Advanced Electronic Materials;2022-11-14

3. Effect of capping layers on the near-surface region of SrVO3 films;Journal of Vacuum Science & Technology A;2022-01

4. Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces;Journal of Applied Physics;2020-07-28

5. Oxide 2D electron gases as a reservoir of defects for resistive switching;Applied Physics Letters;2020-06-01

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