Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/Al
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337775
Reference24 articles.
1. Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure
2. Electrical and mechanical features of the platinum silicide‐aluminum reaction
3. Barrier layers: Principles and applications in microelectronics
4. Diffusion barriers in thin films
5. Diffusion barriers in layered contact structures
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Film Thickness Effects and their Influence on the Stability of the CrSiO/VO/Al Film Systems;physica status solidi (a);1990-06-16
2. Reaction between Cu and PtSi with Cr, Ti, W, and C barrier layers;Journal of Applied Physics;1990-05-15
3. Kinetics and mechanism of oxide formation on titanium, vanadium and chromium thin films;Journal of the Less Common Metals;1990-03
4. Reduced Al/PtSi reaction up to 600 °C using an amorphous carbon barrier layer;Journal of Applied Physics;1989-11-15
5. Effect of VO barriers in CrSiO/VO/Al thin film system;Thin Solid Films;1989-10
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