Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications-Reference-Cited by-同舟云学术

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Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications

Published:2009-02-02 Issue:5 Volume:94 Page:053508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jung Myung-Ho,Kim Kwan-Su,Park Goon-Ho,Cho Won-Ju

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3078279

Reference19 articles.

1. IPFA 14th International Symposium;Mouli C.,2007

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