Effects of low work function metals on the barrier height of sulfide‐treatedn‐type GaAs(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352153
Reference22 articles.
1. Monocrystalline aluminium ohmic contact ton‐GaAs by H2S adsorption
2. Direct variation of metal‐GaAs Schottky barrier height by the influence of interface S, Se, and Te
3. Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
4. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
5. Investigations of ammonium sulfide surface treatments on GaAs
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