Direct variation of metal‐GaAs Schottky barrier height by the influence of interface S, Se, and Te
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96312
Reference14 articles.
1. Barrier Height Studies on Metal‐Semiconductor Systems
2. Electrical properties of ideal metal contacts to GaAs: Schottky-barrier height
3. Electrical properties of ideal metal contacts to GaAs: Schottky-barrier height
4. Rare‐earth metal Schottky‐barrier contacts to GaAs
5. Monocrystalline aluminium ohmic contact ton‐GaAs by H2S adsorption
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