Author:
Pérez-Tomás A.,Fontserè A.,Sánchez S.,Jennings M. R.,Gammon P. M.,Cordier Y.
Subject
Physics and Astronomy (miscellaneous)
Reference20 articles.
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3. The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates
4. Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy
5. Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis
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