Radiation damage in neutron transmutation‐doped silicon. I. Electron paramagnetic resonance study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332078
Reference10 articles.
1. Breakdown behavior of rectifiers and thyristors made from striation-free silicon
2. Preparation of Uniform Resistivity n-Type Silicon by Nuclear Transmutation
3. Application of thermal neutron irradiation for large scale production of homogeneous phosphorus doping of floatzone silicon
4. Electron trap annealing in neutron transmutation doped silicon
5. Electron trapping in neutron transmutation doped silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Annealing of defects created in silicon by MeV ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
2. Annealing studies of vacancies in proton irradiated silicon;Journal of Applied Physics;1993-04-15
3. Hole trap annealing in neutron-transmutation-doped silicon with different initial resistivities;Semiconductor Science and Technology;1990-07-01
4. On the correlation between high‐order bands and some photoluminescence lines in neutron‐irradiated FZ silicon;Journal of Applied Physics;1989-10-15
5. Deep-level transient spectroscopy and Hall effect studies of NTD silicon with different initial resistivities;Semiconductor Science and Technology;1988-07-01
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