Band‐gap narrowing in semi‐insulating gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339325
Reference31 articles.
1. Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K
2. Electrical and optical bandgap narrowing due to heavy doping in silicon
3. High dopant and carrier concentration effects in gallium arsenide: Band structure and effective intrinsic carrier concentrations
4. Intrinsic densityni(T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients
5. Semiconducting and other major properties of gallium arsenide
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