NiSi crystal structure, site preference, and partitioning behavior of palladium in NiSi(Pd)/Si(100) thin films: Experiments and calculations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3606536
Reference23 articles.
1. Radioactive silicon as a marker in thin‐film silicide formation
2. Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
3. The sputtering of PtSi and NiSi
4. Interfacial reaction in MOS structures
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