Kinetics of surface-state laser annealing in Si by frequency-swept infrared photothermal radiometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123870
Reference6 articles.
1. Laser infrared photothermal radiometry of semiconductors: principles and applications to solid state electronics
2. Non-destructive, non-contact characterization of silicon using photothermal radiometry
3. Non-contacting determination of carrier lifetime and surface recombination velocity using photothermal radiometry
4. Temporal behavior of modulated optical reflectance in silicon
5. Highly resolved separation of carrier‐ and thermal‐wave contributions to photothermal signals from Cr‐doped silicon using rate‐window infrared radiometry
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