Photoluminescence study of porous p-type silicon: Identification of radiative transitions-Reference-Cited by-同舟云学术

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Photoluminescence study of porous p-type silicon: Identification of radiative transitions

Published:2018-09 Issue: Volume:201 Page:11-17
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Ramirez-Gutierrez Cristian F.,Medina-Herrera Andrés,Tirado-Mejía Liliana,Zubieta-Otero Luis F.,Auciello Orlando,Rodriguez-Garcia Mario E.

Funder

CONACYT

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference28 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers;Canham;Appl. Phys. Lett.,1990

2. The structural and luminescence properties of porous silicon;Cullis;J. Appl. Phys.,1997

3. Photoluminescence origins of the porous silicon nanowire arrays;Lin;Appl. Phys. Lett.,2011

4. The luminescence of porous Si: the case for the surface state mechanism;Koch;J. Lumin.,1993

5. Chemical modification of the photoluminescence quenching of porous silicon;Lauerhaas;Science,1993

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