Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers

Author:

Tsang W. T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A new method for analysing peak broadening caused by compositional fluctuation in X-ray diffraction measurements;Journal of Applied Crystallography;2001-11-17

2. A Novel Analysis Method for Peak Broadening Due to Thin Structures in Double Crystal X-Ray Diffraction Measurements;Japanese Journal of Applied Physics;2001-09-15

3. Benefits of chemical beam epitaxy for micro and optoelectronic applications;Progress in Crystal Growth and Characterization of Materials;1996-01

4. A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers;IEEE Journal of Selected Topics in Quantum Electronics;1995-06

5. Introduction;Gas Source Molecular Beam Epitaxy;1993

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