Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97455
Reference22 articles.
1. Chemical beam epitaxy of InP and GaAs
2. Chemical beam epitaxial growth of extremely high quality InGaAs on InP
3. Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy
4. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
5. InGaAs/InPp‐i‐nphotodiodes grown by chemical beam epitaxy
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3. Benefits of chemical beam epitaxy for micro and optoelectronic applications;Progress in Crystal Growth and Characterization of Materials;1996-01
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5. Introduction;Gas Source Molecular Beam Epitaxy;1993
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