Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing-Reference-Cited by-同舟云学术

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Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

Published:2012-04-02 Issue:14 Volume:100 Page:143501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lien Yu-Chung,Shieh Jia-Min,Huang Wen-Hsien,Tu Cheng-Hui,Wang Chieh,Shen Chang-Hong,Dai Bau-Tong,Pan Ci-Ling,Hu Chenming,Yang Fu-Liang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3700729

Reference26 articles.

1. A silicon nanocrystals based memory

2. High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory

3. High-Program/Erase-Speed SONOS With In Situ Silicon Nanocrystals

4. Effect of SiO2Tunnel Oxide Thickness on Electron Tunneling Mechanism in Si Nanocrystal Dots Floating-Gate Memories

5. Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory

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