Diamond Schottky diodes with ideality factors close to 1
Author:
Affiliation:
1. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4897315
Reference21 articles.
1. Device Grade B-Doped Homoepitaxial Diamond Thin Films
2. Exceptionally high voltage Schottky diamond diodes and low boron doping
3. High-voltage single-crystal diamond diodes
4. Extreme dielectric strength in boron doped homoepitaxial diamond
5. characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate
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