Numerical simulation of wide band‐gap AlGaN/InGaN light‐emitting diodes for output power characteristics and emission spectra
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361148
Reference33 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
4. Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
5. Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes
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