Bismuth-catalyzed n-type doping and growth evolution of planar silicon nanowires-Reference-Cited by-同舟云学术

Bismuth-catalyzed n-type doping and growth evolution of planar silicon nanowires

Published:2020-12-14 Issue:24 Volume:117 Page:243103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dong Taige¹,Sun Ying¹,Wang Junzhuan¹,Xu Jun¹,Chen Kunji¹^ORCID,Yu Linwei¹^ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093 Nanjing, China

Funder

National natural science foundation of China

National natrual science foundation of China

National key R&D program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0032036

Reference52 articles.

1. Ultraminiaturized Stretchable Strain Sensors Based on Single Silicon Nanowires for Imperceptible Electronic Skins

2. Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes

3. Schottky‐Contacted Nanowire Sensors

4. Air-Bridged Ohmic Contact on Vertically Aligned Si Nanowire Arrays: Application to Molecule Sensors

5. High-Gain Silicon-Based InGaN/GaN Dot-in-Nanowire Array Photodetector

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