Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR
Author:
Affiliation:
1. Department of Physics and Astronomy, University of Leuven, 3001 Leuven, Belgium
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0002046
Reference42 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Phase engineering of transition metal dichalcogenides
3. Single-layer MoS2 transistors
4. High Performance Multilayer MoS2 Transistors with Scandium Contacts
5. MoS 2 transistors with 1-nanometer gate lengths
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3. Dilute Rhenium Doping and its Impact on Defects in MoS2;ACS Nano;2023-08-03
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