Accurate determination of heterojunction band discontinuities in the presence of interface traps using capacitance‐voltage techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343214
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1. High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions;Journal of The Electrochemical Society;2011
2. Small-signal analysis of semiconductor heterojunctions with interacting interface states;Semiconductor Science and Technology;1997-10-01
3. Simulation of capacitance-voltage profiles for the analysis of measurements at a p-type Si-SiGe-Si single quantum well;Semiconductor Science and Technology;1993-07-01
4. In0.53Ga0.47As/InP heterojunctions with low interface defect densities;Journal of Applied Physics;1991-01
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