Velocity-field characteristics in the multivalley model of gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1884756
Reference4 articles.
1. Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field
2. High-Field Distribution and Mobility in Semiconductors
3. Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype
4. Velocity-field dependence in GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Drift-Diffusion and Multivalley Transport;Nanoelectronics;2015-02-05
2. Comment on “Theoretical analysis of high-field transport in graphene on a substrate” [J. Appl. Phys.116, 034507 (2014)];Journal of Applied Physics;2014-12-21
3. GaAs: mobility, drift velocity;New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds;2008
4. Monte Carlo investigation of drift and diffusion in semiconductor superlattices in the Wannier-Stark regime;Physical Review B;2005-11-03
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