Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97976
Reference12 articles.
1. The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need
2. Measurement of the electron velocity-field characteristic in modulation-doped structures using the geometrical magnetoresistance method
3. Field‐dependent transport of electrons in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction systems
4. Mobilities of Electrons in High Electric Fields
5. Hot Electrons in Germanium and Ohm's Law
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