Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2780058
Reference11 articles.
1. Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures
2. High-Field Distribution and Mobility in Semiconductors
3. Mark Lundstrom and Jing Guo, Nanoscale Transistors (Springer, New York, 2006), p. 12.
4. Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype
5. Effect of electric-field-induced mobility degradation on the velocity distribution in a sub- mu m length channel of InGaAs/AlGaAs heterojunction MODFET
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