Ion implantation synthesized copper oxide-based resistive memory devices-Reference-Cited by-同舟云学术

Ion implantation synthesized copper oxide-based resistive memory devices

Published:2011-11-14 Issue:20 Volume:99 Page:202102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bishop S. M.,Bakhru H.,Novak S. W.,Briggs B. D.,Matyi R. J.,Cady N. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3662036

Reference19 articles.

1. Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

2. Forming Process Investigation of $\hbox{Cu}_{x} \hbox{O}$ Memory Films

3. S. M. Bishop, B. D. Briggs, Z. P. Rice, S. Addepalli, N. R. McDonald, and N. C. Cady, in Proceedings from the 2011 Spring Materials Research Society (MRS) Meeting, San Francisco, CA, 25–29 April 2011.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation characteristics of copper oxide thin films deposited by direct current sputtering under substrate temperature and post-deposition copper-ion implantation;Thin Solid Films;2024-09

2. Plasma fireball-mediated ion implantation for nonvolatile memory application;Applied Surface Science;2023-01

3. Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation;Nanotechnology;2018-08-15

4. Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition;Physics Letters A;2016-11

5. Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications;Advanced Functional Materials;2016-02-08