Effects of Stress‐Induced Band‐Gap Widening and Defects in GaAs Junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1708056
Reference13 articles.
1. Resistance of Elastically Deformed Shallow p‐n Junctions. II
2. Effect of Mechanical Stress on p‐n Junction Device Characteristics
3. Anisotropic Stress Effect on the Excess Current in Tunnel Diodes
4. Anisotropic Stress Effect of SiliconpnJunctions
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