Sensitivity of 2DEG-based Hall-effect sensors at high temperatures-Reference-Cited by-同舟云学术

Sensitivity of 2DEG-based Hall-effect sensors at high temperatures

Published:2020-02-01 Issue:2 Volume:91 Page:025003
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Alpert H. S.¹^ORCID,Chapin C. A.¹^ORCID,Dowling K. M.²^ORCID,Benbrook S. R.²^ORCID,Köck H.³^ORCID,Ausserlechner U.³^ORCID,Senesky D. G.¹^ORCID

Affiliation:

1. Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305, USA

2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

3. Infineon Technologies Austria AG, Villach 9500, Austria

Funder

National Science Foundation

National Defense Science and Engineering Graduate

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5139911

Reference31 articles.

1. High Temperature Hall sensors using AlGaN/GaN HEMT Structures

2. P. Beauchamp, J. Cutts, M. Amato, T. Kremic, R. Gold, J. Hall, G. Hunter, E. Kolawa, G. Landis, M. Mojarradi, S. Surampudi, S. Townes, and R. Venkatapathy, “Venus technology plan,” Technical Report NASA, 2014, https://www.lpi.usra.edu/vexag/reports/Venus-Technology-Plan-140617.pdf.

3. High temperature Hall effect sensors based on AlGaN∕GaN heterojunctions

4. A 400°C silicon Hall sensor

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