Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N-Reference-Cited by-同舟云学术

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

Published:2015-08-17 Issue:7 Volume:107 Page:072103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kusch Gunnar¹,Nouf-Allehiani M.¹,Mehnke Frank²,Kuhn Christian²,Edwards Paul R.¹^ORCID,Wernicke Tim²,Knauer Arne³,Kueller Viola³,Naresh-Kumar G.¹,Weyers Markus³,Kneissl Michael²³,Trager-Cowan Carol¹,Martin Robert W.¹^ORCID

Affiliation:

1. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom

2. Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

3. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/apl/107/7/1.4928667.pdf?itemId=/content/aip/journal/apl/107/7/10.1063/1.4928667&mimeType=pdf&containerItemId=content/aip/journal/apl

Reference32 articles.

1. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

2. Activation energies of Si donors in GaN

3. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

4. Stable and metastable Si negative-U centers in AlGaN and AlN

5. First-principles calculations for defects and impurities: Applications to III-nitrides

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