Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119753
Reference3 articles.
1. High‐precision x‐ray reflectivity study of ultrathin SiO2 on Si
2. General Relationship for the Thermal Oxidation of Silicon
3. Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO2Films
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