Dissociative and selective adsorption of H2S on the GaAs(001)‐(4×2) surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117262
Reference22 articles.
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced H2S sensing properties of Gallium doped ZnO nanocrystalline films as investigated by DC conductivity and impedance spectroscopy;Materials Chemistry and Physics;2018-08
2. Quantum Chemical Study of Adsorption and Dissociation of H2S on the Gallium-Rich GaAs (001)-4 × 2 Surface;The Journal of Physical Chemistry B;2006-04-27
3. Mechanism of H2S molecule adsorption on the GaAs(100) surface: Ab initio quantum-chemical analysis;Physics of the Solid State;2006-01
4. Surface Chemistry of Prototypical Bulk II−VI and III−V Semiconductors and Implications for Chemical Sensing;Chemical Reviews;2000-06-09
5. In Situ Optical and Electrochemical AFM Monitoring of Cu Electrodeposition Process on Bare and (NH[sub 4])[sub 2]S-Treated p-GaAs(001) Surfaces;Journal of The Electrochemical Society;2000
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