Recombination processes in passivated boron-implanted black silicon emitters-Reference-Cited by-同舟云学术

Recombination processes in passivated boron-implanted black silicon emitters

Published:2017-05-14 Issue:18 Volume:121 Page:185706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

von Gastrow Guillaume¹,Ortega Pablo²,Alcubilla Ramon²^ORCID,Husein Sebastian³,Nietzold Tara³,Bertoni Mariana³^ORCID,Savin Hele¹^ORCID

Affiliation:

1. Aalto University, Department of Electronics and Nanoengineering, Tietotie 3, 02150 Espoo, Finland

2. Universitat Politècnica de Catalunya, Dept. Enginyeria Electrònica, C/ Jordi Girona 1-3, Mòdul C4, E - 08034 Barcelona, Spain

3. Defect Lab, Ira A. Fulton Schools of Engineering, School of Electrical, Computer and Energy Engineering (ECEE), Arizona State University, 551 E. Tylor Mall, Tempe, Arizona 85287, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983297

Reference50 articles.

1. Optical reflectance and transmission of a textured surface

2. Characterization of MAE-Textured Nanoporous Silicon for Solar Cells Application: Optics and Surface Passivation

3. Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition

4. Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

5. Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

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