Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm-Reference-Cited by-同舟云学术

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Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

Published:2023-05-22 Issue:6 Volume:10 Page:1735-1741
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Setälä Olli E.¹^ORCID,Chen Kexun¹,Pasanen Toni P.¹,Liu Xiaolong¹^ORCID,Radfar Behrad¹^ORCID,Vähänissi Ville¹^ORCID,Savin Hele¹^ORCID

Affiliation:

1. Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland

Funder

European Metrology Programme for Innovation and Research

Academy of Finland

Finnish Research Impact Foundation

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.2c01984

Reference37 articles.

1. AlGaN-based UV photodetectors

2. New concept ultraviolet photodetectors

3. Cancer cell classification with coherent diffraction imaging using an extreme ultraviolet radiation source

4. Comparative Study of Silicon-Based Ultraviolet Photodetectors

5. A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

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