Impurity effects on the mechanical behavior of GaAs crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350805
Reference42 articles.
1. The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown Silicon
2. In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals
3. Interaction of dislocations with impurities in silicon crystals studied byin situX-ray topography
4. Mechanical strength of silicon crystals as a function of the oxygen concentration
5. Dislocation dynamics in the plastic deformation of silicon crystals I. Experiments
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