Nonequilibrium behavior of charged point defects during phosphorus diffusion in silicon-Reference-Cited by-同舟云学术

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Nonequilibrium behavior of charged point defects during phosphorus diffusion in silicon

Published:1989-03-15 Issue:6 Volume:65 Page:2243-2247
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Richardson W. B.,Mulvaney B. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.342836

Reference24 articles.

1. Excess vacancy generation mechanism at phosphorus diffusion into silicon

2. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect

3. Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon

4. Numerical Solution of Phosphorus Diffusion Equation in Silicon

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4. Type and charge states of point defects in heavily As- and B-doped silicon;Materials Science in Semiconductor Processing;2003-02

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