Type and charge states of point defects in heavily As- and B-doped silicon-Reference-Cited by-同舟云学术

Type and charge states of point defects in heavily As- and B-doped silicon

Published:2003-02 Issue:1-3 Volume:6 Page:15-19
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Nakabayashi Y.,Osman H.I.,Yokota K.,Toyonaga K.,Matsumoto S.,Murota J.,Wada K.,Abe T.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

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2. Watkins GD. In: Jackson KA, Schroter W, editors. Handbook of semiconductor technology, vol. 1. Weinheim: Wiley-VCH; 2000 [chapter 3].

3. Kimerling LC. Institute of Physics Conference Series No. 31, 1977. 9. 221.

4. Diffusion in crystalline solids;Frank,1984

5. Fair RB, In: Kahng D, editor. Silicon integrated circuits. New York: Academic Press; 1981. p. 1–108.

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