Comparative study of self‐limiting growth of GaAs using different Ga‐alkyl compounds: (CH3)3Ga, C2H5(CH3)2Ga, and (C2H5)3Ga
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346980
Reference10 articles.
1. Molecular Layer Epitaxy
2. New approach to the atomic layer epitaxy of GaAs using a fast gas stream
3. GaAs/GaP strained-layer superlattices grown by atomic layer epitaxy
4. Growth of GaAs and AlAs thin films by a new atomic layer epitaxy technique
5. Atomic layer epitaxy of GaP and elucidation for self‐limiting mechanism
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