Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4921801
Reference36 articles.
1. High performance of high-voltage 4H-SiC Schottky barrier diodes
2. Pinning-controlled ohmic contacts: application to SiC(0001)
3. Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide
4. Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures
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