Impurity-free disordering of InAs∕InP quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748845
Reference10 articles.
1. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
2. Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures
3. Group-III intermixing in InAs∕InGaAlAs quantum dots-in-well
4. Group-V intermixing in InAs∕InP quantum dots
5. High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots
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1. In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing;Applied Physics Letters;2018-07-30
2. Intermixing of InP-based quantum dots and application to micro-ring resonator wavelength-selective filter for photonic integrated devices;Applied Physics Express;2014-09-01
3. Catastrophic Optical Damage in Quantum Dot Lasers;Quantum Dot Devices;2012
4. Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime;SPIE Proceedings;2011-11-23
5. In situ control and monitoring of photonic device intermixing during laser irradiation;Optics Express;2011-05-02
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