High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2710006
Reference10 articles.
1. Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
2. Tuning self-assembled InAs quantum dots by rapid thermal annealing
3. Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
4. Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap
5. Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing
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1. Catastrophic Optical Damage in Quantum Dot Lasers;Quantum Dot Devices;2012
2. In situ control and monitoring of photonic device intermixing during laser irradiation;Optics Express;2011-05-02
3. Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence;Journal of Crystal Growth;2011-03
4. Growth and Characterization of Self-Assembled InAs/InP Quantum Dot Structures;Journal of Nanoscience and Nanotechnology;2010-03-01
5. Progress and Prospects for Quantum Dots in a Well Infrared Photodetectors;Journal of Nanoscience and Nanotechnology;2010-03-01
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