Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2142330
Reference21 articles.
1. Quantum dot lasers: breakthrough in optoelectronics
2. Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier
3. Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
4. Selective control of self-organized In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dot properties: Quantum dot intermixing
5. Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots
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3. Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing;Journal of Nanoscience and Nanotechnology;2011-10-01
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