Formation of linear InAs quantum dot arrays on InGaAsP∕InP (100) by self-organized anisotropic strain engineering and their optical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2777198
Reference20 articles.
1. In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition
2. Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy
3. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
4. Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfaces
5. Controlled ordering and positioning of InAs self-assembled quantum dots
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1. Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates;Journal of Crystal Growth;2015-02
2. Lasing Characteristics of InP-Based InAs Quantum Dots Depending on InGaAsP Waveguide Conditions;Journal of Nanoscience and Nanotechnology;2014-12-01
3. High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer;Laser Physics Letters;2014-09-29
4. Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures;Physical Review B;2014-09-15
5. Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays;Journal of Crystal Growth;2011-11
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