Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass
Author:
Affiliation:
1. Surface and Nanoscience Division, Material Science Group, Indira Gandhi Centre for Atomic Research, HBNI, Kalpakkam 603102, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5115539
Reference48 articles.
1. Current topics of silicon germanium devices
2. In-situ formation of Ge-rich SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap
3. Solar photovoltaic electricity: Current status and future prospects
4. Thin-film polycrystalline silicon solar cells on ceramic substrates by aluminium-induced crystallization
5. Low-temperature Al-induced crystallization of amorphous Ge
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